Wraparound top electrode line for crossbar array resistive switching device

US10297750B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Takashi Ando · Tuckahoe, US
• Benjamin D. Briggs · Cohoes, US
• Lawrence A. Clevenger · Saratoga Springs, US
• Michael Rizzolo · Delmar, US
• Chih-Chao Yang · Glenmont, US

Key dates

• Filing date: Nov 16, 2017
• Grant date: May 21, 2019
• Expiry date: Nov 16, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A method is presented for forming a semiconductor device. The method includes depositing an insulating layer over a semiconductor substrate, etching the insulating layer to form a plurality of trenches for receiving a first conducting material, forming a resistive switching memory element over at least one trench of the plurality of trenches, the resistive switching memory element having a conducting cap formed thereon, and depositing a dielectric cap over the trenches. The method further includes etching portions of the insulating layer to expose a section of the dielectric cap formed over the resistive switching memory element, etching the exposed section of the dielectric cap to expose the conducting cap of the resistive switching memory element, and forming a barrier layer in direct contact with the exposed section of the conducting cap.