Localized process control using a plasma system
US10304668B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2017 |
| Grant date | May 28, 2019 |
| Priority date | — |
| Expiry date | Jun 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3299
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Plasma processing conditions may be changed for localized regions of a substrate. A reactive gas may be maintained in a localized region of a substrate while other regions of the substrate are not exposed to the reactive gas. Thus, plasma conditions may be generated at specific regions of the substrate. A multi-zoned gas injection system may be utilized to direct certain gases in certain regions of the plasma space. Techniques may be provided to maintain these gases in the desired regions, as opposed to the gases spreading across the substrate surface. Reactive gases may be provided in one region while a flow of inert gas is provided in other regions in which it is desired to restrict the effects of the reactive gases. Localized control of the plasma process may be provided as a separate plasma processing step. The localized region of the substrate may be the substrate edge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.