Inverse tone direct print EUV lithography enabled by selective material deposition

US10304744B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Praveen Joseph · White Plains, US
• Ekmini Anuja De Silva · Slingerlands, US
• Fee Li Lie · Albany, US
• Stuart A. Sieg · Albany, US
• Yann Mignot · Slingerlands, US
• Indira Seshadri · Niskayuna, US

Key dates

• Filing date: May 15, 2018
• Grant date: May 28, 2019
• Expiry date: May 15, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02186
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Various methods and structures for fabricating a plurality of vertical fins in a vertical fin pattern on a semiconductor substrate where the vertical fins in the vertical fin pattern are separated by wide-open spaces, along a critical dimension, in a low duty cycle of 1:5 or lower. Adjacent vertical fins in the vertical fin pattern can be all separated by respective wide-open spaces, along a critical dimension, in a low duty cycle, and wherein pairs of adjacent vertical fins in the vertical fin pattern, along the critical dimension, are separated by a constant pitch value at near zero tolerance.