Semiconductor device with stripe-shaped trench gate structures, transistor mesas and diode mesas

US10304953B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Aichinger · Faak am See, AT
• Dethard Peters · Edenkoben, DE
• Ralf Siemieniec · Villach, AT

Key dates

• Filing date: Dec 18, 2015
• Grant date: May 28, 2019
• Expiry date: Dec 18, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/00

Abstract

A semiconductor device includes stripe-shaped trench gate structures that extend in a semiconductor body along a first horizontal direction. Transistor mesas between neighboring trench gate structures include body regions and source zones, wherein the body regions form first pn junctions with a drift structure and second pn junctions with the source zones. The source zones directly adjoin two neighboring trench gate structures, respectively. Diode mesas that include at least portions of diode regions form third pn junctions with the drift structure. The diode mesas directly adjoin two neighboring trench gate structures, respectively. The transistor mesas and the diode mesas alternate at least along the first horizontal direction.