Patent · US Active

Deposition device and deposition method

US10309005B2 · kind B2 · utility

1Cited by

4References

19Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Yasuhiko Kojima · Saitama, JP
Hiroshi Sone · Sagamihara, JP
Atsushi Gomi · Yamanashi, JP
Kanto Nakamura · Yamanashi, JP
Toru Kitada · Yamanashi, JP
Yasunobu Suzuki · Koganei, JP
Yusuke Suzuki · Kawasaki, JP
Koichi Takatsuki · Nirasaki, JP
Tatsuo Hirasawa · Yamanashi, JP
Keisuke Sato · Osaka, JP
Chiaki Yasumuro · Nirasaki, JP
Atsushi Shimada · Hitachinaka, JP

Key dates

Filing date	Aug 28, 2014
Grant date	Jun 4, 2019
Priority date	—
Expiry date	Oct 1, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/85
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.