Method for producing III-N templates and the reprocessing thereof and III-N template
US10309037B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2013 |
| Grant date | Jun 4, 2019 |
| Priority date | — |
| Expiry date | Nov 18, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24851
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.