Semiconductor devices comprising protected side surfaces and related methods
US10312226B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2017 |
| Grant date | Jun 4, 2019 |
| Priority date | — |
| Expiry date | Oct 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18161
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of protecting semiconductor devices may involve cutting partially through a thickness of a semiconductor wafer to form trenches between stacks of semiconductor dice on regions of integrated circuitry of the semiconductor wafer. A protective material may be dispensed into the trenches and to a level at least substantially the same as a height of the stacks of semiconductor dice. Material of the semiconductor wafer may be removed from a back side thereof at least to a depth sufficient to expose the protective material in the trenches. A remaining thickness of the protective material between the stacks of semiconductor dice may be cut through.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.