Method for forming a semiconductor device
US10312249B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2017 |
| Grant date | Jun 4, 2019 |
| Priority date | — |
| Expiry date | Nov 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device is provided, including providing a substrate having a first area comprising first semiconductor structures and a second area, wherein one of the first semiconductor structures comprises a memory gate made of a first polysilicon layer, and a second semiconductor structure comprises a second polysilicon layer disposed within the second area on the substrate; forming an organic material layer on the first semiconductor structures within the first area and on the second polysilicon layer within the second area; and patterning the organic material layer to form a patterned organic material layer, and the organic material layer exposing the memory gates of the first semiconductor structures, wherein a first pre-determined region and a second pre-determined region at the substrate are covered by the patterned organic material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.