Wang Xiang
22Patents
4h-index
23Co-inventors
63Inventor score
Filing activity: Apr 30, 2004 → Oct 19, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8307562B2 | Laser line generator having three intersecting light planes | Physics | 38 | Active |
| USD510409S1 | Showerhead | General | 23 | Expired |
| USD509883S1 | Faucet handle | General | 7 | Expired |
| US9455322B1 | Flash cell and forming process thereof | Electricity | 4 | Active |
| US10699958B2 | Semiconductor device with high-resistance gate | Electricity | 3 | Active |
| USD509570S1 | Faucet handle | General | 3 | Expired |
| US11127752B2 | Structure of semiconductor device and method for fabricating the same | Electricity | 1 | Active |
| US12010931B2 | Resistive random-access memory (RRAM) device and forming method thereof | Electricity | 1 | Active |
| US9324724B1 | Method of fabricating a memory structure | Electricity | 1 | Active |
| US9748256B2 | Semiconductor device and method of forming the same | Electricity | 1 | Active |
| US9978758B1 | Flash memory cell | Electricity | 1 | Active |
| US9865693B1 | Semiconductor memory cell, semiconductor memory device, and method of manufacturing semiconductor memory device | Electricity | 0 | Active |
| US10692875B2 | Memory structure | Electricity | 0 | Active |
| US12156487B2 | Method for forming resistive random-access memory device | Electricity | 0 | Active |
| US10062705B1 | Method of manufacturing a flash memory | Electricity | 0 | Active |
| US10916634B2 | Method of fabricating a flash memory | Electricity | 0 | Active |
| US11444095B2 | Semiconductor device with integrated memory devices and MOS devices and process of making the same | Electricity | 0 | Active |
| US11387337B2 | Memory device and method for fabricating the same | Electricity | 0 | Active |
| US10903326B2 | Semiconductor device and method for fabricating the same | Electricity | 0 | Active |
| US11011535B1 | Semiconductor device with integrated memory devices and MOS devices and process of making the same | Electricity | 0 | Active |
| US10121869B2 | Method of manufacturing semiconductor memory device | Electricity | 0 | Active |
| US10312249B2 | Method for forming a semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.