Redundant array of independent NAND for a three-dimensional memory array
US10318378B2 · kind B2 · utility
8Cited by
15References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2016 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Mar 3, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure includes a redundant array of independent NAND for a three dimensional memory array. A number of embodiments include a three-dimensional array of memory cells, wherein the array includes a plurality of pages of memory cells, a number of the plurality of pages include a parity portion of a redundant array of independent NAND (RAIN) stripe, and the parity portion of the RAIN stripe in each respective page comprises only a portion of that respective page.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.