SRAM with error correction in retention mode
US10319429B2 · kind B2 · utility
2Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 17, 2018 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | May 17, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/0411
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for storing information in SRAM bit cell arrays provides for lowering voltage supplied to the SRAM bit cell arrays, with voltage lowering controlled by a connected voltage control circuit. Writing, reading, and correcting information storable in the SRAM bit cell arrays is accomplished using an error correcting code (ECC) block connected to at least some of the SRAM bit cell arrays. The ECC block is configurable to repair stored information.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.