Geometric control of bottom-up pillars for patterning applications
US10319591B2 · kind B2 · utility
2Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Nov 7, 2017 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Nov 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Processing methods comprising selectively replacing a first pillar material with a second pillar material in a self-aligned process are described. The first pillar material may be grown orthogonally to the substrate surface and replaced with a second pillar material to leave a substantially similar shape and alignment as the first pillar material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.