Patent · US Active

Geometric control of bottom-up pillars for patterning applications

US10319591B2 · kind B2 · utility

2Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 7, 2017
Grant dateJun 11, 2019
Priority date
Expiry dateNov 7, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76897
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Processing methods comprising selectively replacing a first pillar material with a second pillar material in a self-aligned process are described. The first pillar material may be grown orthogonally to the substrate surface and replaced with a second pillar material to leave a substantially similar shape and alignment as the first pillar material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.