Methods of planarizing SiC surfaces

US10319599B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Helmut Oefner · Zorneding, DE
• Roland Rupp · Achern, DE

Key dates

• Filing date: May 31, 2017
• Grant date: Jun 11, 2019
• Expiry date: Jul 11, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/83
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of planarizing a roughened surface of a SiC substrate includes: forming a sacrificial material on the roughened surface of the SiC substrate, the sacrificial material having a density between 35% and 120% of the density of the SiC substrate; implanting ions through the sacrificial material and into the roughened surface of the SiC substrate to form an amorphous region in the SiC substrate; and removing the sacrificial material and the amorphous region of the SiC substrate by wet etching.