Methods for self-aligned patterning

US10319604B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Ziqing Duan · Sunnyvale, US
• Yihong Chen · San Jose, US
• Abhijit Basu Mallick · Palo Alto, US
• Srinivas Gandikota · Santa Clara, US

Key dates

• Filing date: Nov 7, 2017
• Grant date: Jun 11, 2019
• Expiry date: Nov 7, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32136
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Processing methods comprising depositing a film on a substrate surface and in a surface feature with chemical planarization to remove the film from the substrate surface, leaving the film in the feature. A pillar is grown from the film so that the pillar grows orthogonally to the substrate surface.