Patent · US Active

Skip via for metal interconnects

US10319629B1 · kind B1 · utility

12Cited by
9References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 8, 2018
Grant dateJun 11, 2019
Priority date
Expiry dateMay 8, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L23/53295
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Semiconductor devices including skip via structures and methods of forming the skip via structure include interconnection between two interconnect levels that are separated by at least one other interconnect level, i.e., skip via to connect Mx and Mx+2 interconnect levels, wherein a portion of the intervening metallization level (MX+1) is in a pathway of the skip via.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.