Inventor · Wynantskill, NY, US

Nicholas Anthony Lanzillo

88Patents
4h-index
53Co-inventors
61Inventor score

Filing activity: Jan 23, 2017 → Feb 27, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US10319629B1 Skip via for metal interconnects Electricity 12 Active
US10243020B1 Structures and methods for embedded magnetic random access memory (MRAM) fabrication Electricity 11 Active
US9985199B1 Prevention of switching of spins in magnetic tunnel junctions by on-chip parasitic magnetic shield Electricity 4 Active
US10256191B2 Hybrid dielectric scheme for varying liner thickness and manganese concentration Electricity 4 Active
US10553789B1 Fully aligned semiconductor device with a skip-level via Electricity 3 Active
US10727124B2 Structure and method for forming fully-aligned trench with an up-via integration scheme Electricity 3 Active
US11195993B2 Encapsulation topography-assisted self-aligned MRAM top contact Electricity 3 Active
US10746782B2 Accelerated wafer testing using non-destructive and localized stress Physics 2 Active
US11152257B2 Barrier-less prefilled via formation Electricity 2 Active
US10770511B2 Structures and methods for embedded magnetic random access memory (MRAM) fabrication Electricity 2 Active
US11276639B2 Conductive lines with subtractive cuts Electricity 2 Active
US11195795B1 Well-controlled edge-to-edge spacing between adjacent interconnects Electricity 2 Active
US11894265B2 Top via with damascene line and via Electricity 1 Active
US11171084B2 Top via with next level line selective growth Electricity 1 Active
US10978343B2 Interconnect structure having fully aligned vias Electricity 1 Active
US11908791B2 Partial subtractive supervia enabling hyper-scaling Electricity 1 Active
US11139201B2 Top via with hybrid metallization Electricity 1 Active
US11189568B2 Top via interconnect having a line with a reduced bottom dimension Electricity 1 Active
US10739397B2 Accelerated wafer testing using non-destructive and localized stress Physics 1 Active
US11756887B2 Backside floating metal for increased capacitance Electricity 1 Active
US9941211B1 Reducing metallic interconnect resistivity through application of mechanical strain Electricity 1 Active
US11195792B2 Top via stack Electricity 1 Active
US10720567B2 Prevention of switching of spins in magnetic tunnel junctions by on-chip parasitic magnetic shield Electricity 1 Active
US11223655B2 Semiconductor tool matching and manufacturing management in a blockchain Electricity 1 Active
US12148682B2 Memory cell in wafer backside Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.