Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-end
US10319818B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2017 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Oct 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Artificial synaptic devices with a HfO2-based ferroelectric layer that can be implemented in the CMOS front-end are provided. In one aspect, a method of forming a FET device is provided. The method includes: forming a shallow STI region in a substrate separating a first active area of the substrate from a second active area of the substrate; forming at least one FeFET on the substrate in the first active area having a ferroelectric material including a HfO2-based material; and forming at least one logic FET alongside the at least one FeFET on the substrate in the second active area, wherein the at least one logic FET has a gate dielectric including the HfO2-based material. A FET device formed by the present techniques is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.