Method and system for performing post-etch annealing of a workpiece
US10319905B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2015 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Jan 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
Abstract
A method for performing post-etch annealing of a workpiece in an annealing system is described. In particular, the method includes disposing one or more workpieces in an annealing system, each of the one or more workpieces having a multilayer stack of thin films that has been patterned using an etching process sequence to form an electronic device characterized by a cell critical dimension (CD), wherein the multilayer stack of thin films includes at least one patterned layer containing magnetic material. Thereafter, the patterned layer containing magnetic material on the one or more workpieces is annealed in the annealing system via an anneal process condition, wherein the anneal process condition is selected to adjust a property of the patterned layer containing magnetic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.