Semiconductor device, pressure sensor, microphone, and acceleration sensor

US10329140B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Marco Haubold · Dresden, DE
• Henning Feick · Dresden, DE
• Kerstin Kaemmer · Radebeul, DE

Key dates

• Filing date: Feb 8, 2018
• Grant date: Jun 25, 2019
• Expiry date: Feb 8, 2038

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81B2201/0264
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A semiconductor device includes at least one suspension region of a membrane structure, where the suspension region lies laterally in a first region of a surface of a semiconductor substrate; and a membrane region of the membrane structure, where a cavity is arranged vertically between the membrane region and at least one part of the semiconductor substrate, and the first region of the surface of the semiconductor substrate is formed by a surface of a shielding doping region of the semiconductor substrate.