Method for post chemical mechanical polishing clean
US10332741B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | May 8, 2017 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | May 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for post chemical mechanical polishing clean is provided in the present invention, which include the steps of providing a substrate, performing a chemical mechanical polishing process, and performing a plurality of cleaning processes sequentially substrate using solutions of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2) with different ratios and at different temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.