Chun-Wei Yu
28Patents
3h-index
40Co-inventors
55Inventor score
Filing activity: Mar 23, 2015 → Jul 4, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9646889B1 | Method of removing a hard mask layer on a gate structure while forming a protective layer on the surface of a substrate | Electricity | 4 | Active |
| US10332981B1 | Semiconductor device and method for fabricating the same | Electricity | 3 | Active |
| US10079143B2 | Method of forming semiconductor device having wick structure | Electricity | 3 | Active |
| US10446667B2 | Method for fabricating semiconductor device | Electricity | 2 | Active |
| US9960084B1 | Method for forming semiconductor device | Electricity | 2 | Active |
| US10366991B1 | Semiconductor device and manufacturing method thereof | Electricity | 1 | Active |
| US9793105B1 | Fabricating method of fin field effect transistor (FinFET) | Electricity | 1 | Active |
| US11049971B2 | Semiconductor device having epitaxial structure | Electricity | 1 | Active |
| US9728397B1 | Semiconductor device having the insulating layers cover a bottom portion of the fin shaped structure | Electricity | 1 | Active |
| US10460925B2 | Method for processing semiconductor device | Electricity | 0 | Active |
| US12317547B2 | Method of fabricating semiconductor device having epitaxial structure | Electricity | 0 | Active |
| US9514993B2 | Method for manufacturing semiconductor devices comprising epitaxial layers | Electricity | 0 | Active |
| US10622481B2 | Method of rounding corners of a fin | Electricity | 0 | Active |
| US9741572B1 | Method of forming oxide layer | Electricity | 0 | Active |
| US10332750B2 | Method for fabricating semiconductor device with strained silicon structure | Electricity | 0 | Active |
| US10505041B2 | Semiconductor device having epitaxial layer with planar surface and protrusions | Electricity | 0 | Active |
| US11999968B2 | Modified T cells, pharmaceutical composition, manufacturing method thereof, and method of using the same | Chemistry; Metallurgy | 0 | Active |
| US10332741B2 | Method for post chemical mechanical polishing clean | Electricity | 0 | Active |
| US9966266B2 | Apparatus for semiconductor wafer treatment and semiconductor wafer treatment | Electricity | 0 | Active |
| US10651174B2 | FinFET structure and fabricating method of gate structure | Electricity | 0 | Active |
| US10796943B2 | Manufacturing method of semiconductor structure | Electricity | 0 | Active |
| US10559655B1 | Semiconductor device and method for manufacturing the same | Electricity | 0 | Active |
| US10700202B2 | Semiconductor device and method for forming the same | Electricity | 0 | Active |
| US12402367B2 | Semiconductor structure and manufacturing method thereof | Electricity | 0 | Active |
| US11735661B2 | Method of fabricating semiconductor device having epitaxial structure | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.