Patent · US Active

Semiconductor fuses with nanowire fuse links and fabrication methods thereof

US10332834B2 · kind B2 · utility

0Cited by
2References
5Claims
0Family size

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Key dates

Filing dateFeb 1, 2017
Grant dateJun 25, 2019
Priority date
Expiry dateMar 12, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02639
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Semiconductor fuses with nanowire fuse links and fabrication methods thereof are presented. The methods include, for instance: fabricating a semiconductor fuse, the semiconductor fuse including at least one nanowire fuse link, and the fabricating including: forming at least one nanowire, the at least one nanowire including a semiconductor material; and reacting the at least one nanowire with a metal to form the at least one nanowire fuse link of the semiconductor fuse, the at least one nanowire fuse link including a semiconductor-metal alloy. In another aspect, a structure is presented. The structure includes: a semiconductor fuse, the semiconductor fuse including: at least one nanowire fuse link, the at least one nanowire fuse link including a semiconductor-metal alloy.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.