Semiconductor device and a method of fabricating the same
US10332875B2 · kind B2 · utility
0Cited by
5References
7Claims
0Family size
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Key dates
| Filing date | May 9, 2017 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | May 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, a tunnel dielectric disposed on the semiconductor substrate, a floating gate disposed on the tunnel dielectric, a control gate disposed on the floating gate, and an insulation layer disposed between the floating gate and the control gate. The semiconductor device further includes a spacer continuously distributed on the sidewall surfaces of the floating gate and the control gate, and the spacer overlaps portions of the top surface of the floating gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.