Inventor · Hengshan, TW

Tzu-Ping Chen

21Patents
2h-index
13Co-inventors
50Inventor score

Filing activity: Jan 9, 2005 → Feb 18, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US8471328B2 Non-volatile memory and manufacturing method thereof Electricity 7 Active
US9159844B2 Nonvolatile memory device and fabricating method thereof Electricity 4 Active
US9349815B2 Semiconductor structure and a fabricating method thereof Electricity 2 Active
US10332964B2 Single poly electrical erasable programmable read only memory (EEPROM) Electricity 2 Active
US7169668B2 Method of manufacturing a split-gate flash memory device Electricity 2 Expired
US10468538B1 Method for fabricating semiconductor device Electricity 2 Active
US9171915B1 Method for fabricating semiconductor device Electricity 2 Active
US9490016B2 Semiconductor device and method for fabricating the same Electricity 2 Active
US8723249B2 Non-volatile memory Electricity 1 Active
US10515976B2 Semiconductor device and method for fabricating the same Electricity 1 Active
US11437475B2 Split-gate flash memory cell and fabrication method thereof Electricity 0 Active
US7511329B2 NAND-type non-volatile memory Electricity 0 Expired
US10243084B2 Method for fabricating a flash memory Electricity 0 Active
US9564520B1 Method of forming semiconductor device Electricity 0 Active
US7498228B2 Method for fabricating SONOS a memory Electricity 0 Active
US11018132B2 Method of fabricating semiconductor device Electricity 0 Active
US8956943B2 Method for manufacturing non-volatile memory Electricity 0 Active
US10903224B2 Semiconductor device and method for fabricating the same Electricity 0 Active
US9773800B1 Non-volatile memory structure and manufacturing method thereof Electricity 0 Active
US11515316B2 Semiconductor memory device Electricity 0 Active
US10332875B2 Semiconductor device and a method of fabricating the same Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.