Dry etching method and method for manufacturing semiconductor device
US10332906B2 · kind B2 · utility
4Cited by
5References
13Claims
0Family size
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Key dates
| Filing date | Jul 27, 2017 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | Jul 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry etching method includes a process of, while continuously applying bias power using an ion species to a material to be processed including a first conductive member, a first insulating film provided on the first conductive member, a second conductive member provided on the first insulating film, and a second insulating film provided on the second conductive member, dry etching the second insulating film to expose the second conductive member. A time for which the bias power is continuously applied is set to 50 microseconds or less and a duty ratio of the bias power is set to 50% or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.