Uniformity tuning of variable-height features formed in trenches
US10332963B1 · kind B1 · utility
326Cited by
2References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 29, 2018 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | Feb 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a structure for a field-effect transistor and related structures. A trench is formed in one or more semiconductor layers, and forming first and second sacrificial sidewall spacers are formed on an upper portion of the trench. A material is formed in the trench that is arranged in part between the first sacrificial sidewall spacer and the second sacrificial space. After forming the material in the trench, the first and second sacrificial sidewall spacers are removed. After removing the first and second sacrificial sidewall spacers, an upper portion of the material is removed with an isotropic etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.