Negative capacitance matching in gate electrode structures
US10332969B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2018 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | Oct 22, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6211
Abstract
A semiconductor device includes a gate electrode structure that is positioned adjacent to a channel region of a transistor element. The gate electrode structure includes a floating gate electrode portion, a negative capacitor portion, and a ferroelectric material capacitively coupling the floating gate electrode portion to the negative capacitor portion. A first conductive material is positioned between the floating gate electrode portion and the ferroelectric material, wherein a first portion of the first conductive material is embedded in and laterally surrounded by the floating gate electrode portion, and a second conductive material is positioned between the first portion of the first conductive material and the ferroelectric material, wherein the second conductive material is embedded in and laterally surrounded by a second portion of the first conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.