Electronic device and method for fabricating the same
US10333060B2 · kind B2 · utility
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2References
23Claims
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Key dates
| Filing date | Aug 15, 2017 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | Dec 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/063
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for fabricating an electronic device including a semiconductor memory includes: forming an etching target layer over a substrate; forming an initial hard mask pattern including a carbon-containing material over the etching target layer; forming a hard mask pattern by doping an impurity which increases a hardness of the carbon-containing material into a surface portion of the initial hard mask pattern; and etching the etching target layer by using the hard mask pattern as an etching barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.