Fabrication of a perpendicular magnetic tunnel junction (PMTJ) using block copolymers
US10333063B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2018 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | Jan 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
According to one embodiment, a method includes forming an etch-stop layer above a substrate, forming a matrix layer above the etch-stop layer, forming a set of pillars above the matrix layer, the set of pillars having a predefined spacing therebetween along a plane in an element width direction and an element depth direction, the plane being normal to a film thickness direction, forming a functionalization layer above the pillars, along sides of the pillars, and above the matrix layer, forming first diblock copolymer layers above the functionalization layer, the first diblock copolymer layers self-segregating into a first polymer and a second polymer in a first pattern, removing the first polymer from the first diblock copolymer layers to create a first mask layer, and removing portions of the matrix layer to expose portions of the etch-stop layer positioned therebelow and create a second pattern in the matrix layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.