Sputtering target comprising Ni—P alloy or Ni—Pt—P alloy and production method therefor
US10337100B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Mar 12, 2015 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | Aug 23, 2035 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB22F2998/10
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of producing a Ni—P alloy sputtering target, wherein a Ni—P alloy having a P content of 15 to 21 wt % and remainder being Ni and unavoidable impurities is melted and atomized to prepare a Ni—P alloy atomized powder having an average grain size of 100 μm or less, the Ni—P alloy atomized powder is mixed with a pure Ni atomized powder, and the obtained mixed powder is hot pressed. An object of the present invention is to provide a method of producing a Ni—P alloy sputtering target which achieves a small deviation from an intended composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.