Multi-frequency power modulation for etching high aspect ratio features
US10340123B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 24, 2017 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | May 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of etching a substrate is described. The method includes disposing a substrate having a surface exposing a first material and a second material in a processing space of a plasma processing system, and performing a modulated plasma etching process to selectively remove the first material at a rate greater than removing the second material. The modulated plasma etching process includes a power modulation cycle composed of applying a first power modulation sequence to the plasma processing system, and applying a second power modulation sequence to the plasma processing system, the second power modulation sequence being different than the first power modulation sequence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.