Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
US10340135B2 · kind B2 · utility
403Cited by
1,240References
17Claims
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Key dates
| Filing date | Sep 15, 2017 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | Sep 15, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B21/06
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an embodiment, a method for transferring a pattern constituted by vertical spacers arranged on a template with intervals to the template, includes depositing by plasma-enhanced cyclic deposition a layer as a spacer umbrella layer substantially only on a top surface of each vertical spacer made of silicon or metal oxide, wherein substantially no layer is deposited on sidewalls of the vertical spacers and on an exposed surface of the template, followed by transferring the pattern constituted by the vertical spacers to the template by anisotropic etching using the vertical spacers with the spacer umbrella layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.