Inventor · Tama, JP

Timothee Blanquart

30Patents
5h-index
24Co-inventors
61Inventor score

Filing activity: May 2, 2016 → Sep 29, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US9984869B1 Method of plasma-assisted cyclic deposition using ramp-down flow of reactant gas Electricity 454 Active
US10032628B2 Source/drain performance through conformal solid state doping Electricity 447 Active
US10269558B2 Method of forming a structure on a substrate Electricity 406 Active
US10340135B2 Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride Chemistry; Metallurgy 403 Active
US10388513B1 Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition Electricity 378 Active
US10483099B1 Method for forming thermally stable organosilicon polymer film Electricity 5 Active
US10867788B2 Method of forming a structure on a substrate Electricity 4 Active
US11251035B2 Method of forming a structure on a substrate Electricity 4 Active
US10755922B2 Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition Electricity 3 Active
US10784102B2 Method of forming a structure on a substrate Electricity 3 Active
US11482412B2 Method for depositing a gap-fill layer by plasma-assisted deposition Electricity 2 Active
US11776846B2 Methods for depositing gap filling fluids and related systems and devices Electricity 1 Active
US12406881B2 Methods and systems for filling a gap Electricity 0 Active
US12104244B2 Methods and systems for filling a gap Electricity 0 Active
US12112940B2 Method of forming topology-controlled amorphous carbon polymer film Electricity 0 Active
US11572620B2 Methods for selectively depositing an amorphous silicon film on a substrate Electricity 0 Active
US11282698B2 Method of forming topology-controlled amorphous carbon polymer film Electricity 0 Active
US12424490B2 Halogenation-based gapfill method and system Electricity 0 Active
US11972944B2 Method for depositing a gap-fill layer by plasma-assisted deposition Electricity 0 Active
US12341003B2 Method and system for forming material within a gap Electricity 0 Active
US12293942B2 Methods for depositing gap filling fluids and related systems and devices Electricity 0 Active
US12381087B2 Methods for filling a gap and related systems and devices Electricity 0 Active
US12211742B2 Methods for depositing gap filling fluid Electricity 0 Active
US12428728B2 Topology-selective deposition method and structure formed using same Chemistry; Metallurgy 0 Active
US10755923B2 Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.