Patent · US Active

Semiconductor device comprising a clamping structure

US10340264B2 · kind B2 · utility

0Cited by

3References

29Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Stephan Voss · Munich, DE
Roman Baburske · Otterfing, DE
Thomas Basler · Riemerling, DE
Thomas Kimmer · Powirtschach, AT
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Feb 28, 2018
Grant date	Jul 2, 2019
Priority date	—
Expiry date	Feb 28, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D88/101
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Semiconductor device is provided with a semiconductor body that includes a clamping structure including a first pn junction diode and a second pn junction diode serially connected back to back between a first contact and a second contact. A breakdown voltage of the first pn junction diode is greater than 100 V, and a breakdown voltage of the second pn junction diode is greater than 10 V.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.