Patent · US Active

Memory element with a reactive metal layer

US10340312B2 · kind B2 · utility

5Cited by

148References

20Claims

0Family size

Assignee

Hefei Reliance Memory Limited · CN

Inventors

Christophe J. Chevallier · Palo Alto, US
Steve Kuo-Ren Hsia · San Jose, US
Wayne Kinney · Emmett, US
Steven W. Longcor · Mountain View, US
Darrell Rinerson · Cupertino, US
John Sanchez · Palo Alto, US
Philip Swab · Santa Rosa, US
Edmond R. Ward · Monte Sereno, US

Key dates

Filing date	Oct 30, 2017
Grant date	Jul 2, 2019
Priority date	—
Expiry date	Oct 30, 2037

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/79
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A re-writeable non-volatile memory device including a re-writeable non-volatile two-terminal memory element (ME) having tantalum. The ME including a first terminal, a second terminal, a first layer of a conductive metal oxide (CMO), and a second layer in direct contact with the first layer. The second layer and the first layer being operative to store at least one-bit of data as a plurality of resistive states, and the first and second layer are electrically in series with each other and with the first and second terminals.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.