Asymmetric gated fin field effect transistor (FET) (finFET) diodes

US10340370B2 · kind B2 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Hao Wang · Twinsburg, US
• Haining Yang · Wappingers Falls, US
• Xiaonan Chen · Boise, US

Key dates

• Filing date: Dec 7, 2016
• Grant date: Jul 2, 2019
• Expiry date: Dec 7, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/665

Abstract

Asymmetric gated fin field effect transistor (FET) (finFET) diodes are disclosed. In one aspect, an asymmetric gated finFET diode employs a substrate that includes a well region of a first-type and a fin disposed in a direction. A first source/drain region is employed that includes a first-type doped material disposed in the fin having a first length in the direction. A second source/drain region having a second length in the direction larger than the first length is employed that includes a second-type doped material disposed in the fin. A gate region is disposed between the first source/drain region and the second source/drain region and has a third length in the direction that is larger than the first length and larger than the second length. The wider gate region increases a length of a depletion region of the asymmetric gated finFET diode, which reduces current leakage while avoiding increase in area.