Resistive memory device containing carbon barrier and method of making thereof
US10340449B2 · kind B2 · utility
2Cited by
9References
10Claims
0Family size
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Key dates
| Filing date | Jun 1, 2017 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | Jun 1, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0045
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistive memory device, such as a BMC ReRAM device, includes at least one resistive memory element which contains a carbon barrier material portion and a resistive memory material portion that is disposed between a first electrode and a second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.