Cylindrical vertical SI etched channel 3D switching devices
US10347311B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2017 |
| Grant date | Jul 9, 2019 |
| Priority date | — |
| Expiry date | Dec 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/252
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A switching device, according to one embodiment, includes: a cylindrical pillar; an annular cylindrical oxide layer which encircles a portion of the cylindrical pillar; an annular cylindrical gate contact which encircles a portion of the annular cylindrical oxide layer; and a source contact which encircles a portion of the cylindrical pillar toward a first end of the cylindrical pillar. Other systems are also described in additional embodiments herein which provide various different switching devices having improved components including improved cylindrical gate contacts, improved source contacts, and/or improved drain contacts. These improved systems and components thereof may be implemented in vertical transistor structures which also include the aforementioned cylindrical pillar and cylindrical gate contact in comparison to conventional surface transistor structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.