Read threshold optimization in flash memories
US10347331B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2017 |
| Grant date | Jul 9, 2019 |
| Priority date | — |
| Expiry date | Jun 12, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes a plurality of memory blocks, each block with multiple memory cells. Each memory block has an address and a block read threshold. The plurality of memory blocks is partitioned into clusters based on block read thresholds. The memory device also has a look-up table for storing information associating each cluster of memory blocks with a corresponding cluster read threshold. The look-up table further includes cluster boundaries defined in values of device status parameters. The memory device is configured to receive a read command to read a memory block with a read address and identify a cluster for the memory block with the read address. The memory device is also configured to select a cluster read threshold for the identified cluster from the look-up table, and use the selected cluster read threshold to perform a read operation of the memory block.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.