Titanium compound based hard mask films
US10347488B2 · kind B2 · utility
0Cited by
5References
19Claims
0Family size
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Key dates
| Filing date | Sep 19, 2016 |
| Grant date | Jul 9, 2019 |
| Priority date | — |
| Expiry date | Sep 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming a titanium-containing hard mask film on a substrate surface by exposing the substrate surface to a titanium-containing precursor. The titanium-containing hard mask comprises one or more of silicon, oxygen or carbon atoms and, optionally, nitrogen atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.