Inventor · Santa Clara, CA, US

Wei V. Tang

32Patents
4h-index
78Co-inventors
62Inventor score

Filing activity: Nov 6, 2012 → Jun 12, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US9082702B2 Atomic layer deposition methods for metal gate electrodes Electricity 15 Active
US10014185B1 Selective etch of metal nitride films Electricity 8 Active
US10407771B2 Atomic layer deposition chamber with thermal lid Electricity 7 Active
US8927059B2 Deposition of metal films using alane-based precursors Electricity 4 Active
US9748354B2 Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereof Electricity 4 Active
US9145612B2 Deposition of N-metal films comprising aluminum alloys Chemistry; Metallurgy 2 Active
US8987080B2 Methods for manufacturing metal gates Electricity 2 Active
US11715667B2 Thermal process chamber lid with backside pumping Electricity 2 Active
US11335591B2 Thermal process chamber lid with backside pumping Electricity 1 Active
US9947578B2 Methods for forming low-resistance contacts through integrated process flow systems Electricity 1 Active
US8927423B2 Methods for annealing a contact metal layer to form a metal silicidation layer Electricity 1 Active
US11476267B2 Liner for V-NAND word line stack Electricity 0 Active
US11260432B2 In-situ DC plasma for cleaning pedestal heater Electricity 0 Active
US10991586B2 In-situ tungsten deposition without barrier layer Electricity 0 Active
US9683287B2 Deposition of films comprising aluminum alloys with high aluminum content Chemistry; Metallurgy 0 Active
US10879081B2 Methods of reducing or eliminating defects in tungsten film Electricity 0 Active
US10347488B2 Titanium compound based hard mask films Electricity 0 Active
US11171047B2 Fluorine-doped nitride films for improved high-k reliability Electricity 0 Active
US11018009B2 Tuning work function of p-metal work function films through vapor deposition Electricity 0 Active
US11646226B2 Method of tuning film properties of metal nitride using plasma Electricity 0 Active
US10170321B2 Aluminum content control of TiAIN films Electricity 0 Active
US11894233B2 Electronic device having an oxygen free platinum group metal film Electricity 0 Active
US12328872B2 Liner for V-NAND word line stack Electricity 0 Active
US10665450B2 Methods and apparatus for doping engineering and threshold voltage tuning by integrated deposition of titanium nitride and aluminum films Electricity 0 Active
US11075276B2 Methods and apparatus for n-type metal oxide semiconductor (NMOS) metal gate materials using atomic layer deposition (ALD) processes with metal based precursors Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.