Patent · US Active

Production of an integrated circuit including electrical contact on SiC

US10347490B2 · kind B2 · utility

1Cited by

18References

19Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Roland Rupp · Achern, DE
Thomas Gutt · Taufkirchen, DE
Michael Treu · Villach, AT

Key dates

Filing date	Feb 27, 2017
Grant date	Jul 9, 2019
Priority date	—
Expiry date	Feb 27, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/64
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.