Modifying work function of a metal film with a plasma process
US10347492B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2018 |
| Grant date | Jul 9, 2019 |
| Priority date | — |
| Expiry date | Jan 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A sequential plasma process is employed to enable the modification of the work function of a p-type metal layer in a metal gate structure. The sequential plasma process includes a plasma hydrogenation and a plasma process that includes electronegative species. The sequential plasma process is performed on a p-type metal layer in a film stack, thereby replacing suboxides and/or other non-stoichiometrically combined electronegative atoms disposed on or within layers of the film stack with stoichiometrically combined electronegative atoms, such as O atoms. As a result, the work function of the p-type metal layer can be modified without changing a thickness of the p-type metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.