Schemes for selective deposition for patterning applications
US10347495B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jan 26, 2018 |
| Grant date | Jul 9, 2019 |
| Priority date | — |
| Expiry date | Jan 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76849
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include depositing a second metal on a first metal without protecting the dielectric, protecting the metal with a cross-linked self-assembled monolayer and depositing a second dielectric on the first dielectric while the metal is protected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.