Atashi Basu
20Patents
2h-index
43Co-inventors
49Inventor score
Filing activity: Mar 17, 2017 → Nov 28, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10319636B2 | Deposition and treatment of films for patterning | Electricity | 20 | Active |
| US10977405B2 | Fill process optimization using feature scale modeling | Electricity | 3 | Active |
| US10608097B2 | Low thickness dependent work-function nMOS integration for metal gate | Electricity | 2 | Active |
| US10373823B2 | Deployment of light energy within specific spectral bands in specific sequences for deposition, treatment and removal of materials | Electricity | 1 | Active |
| US11515151B2 | Methods and precursors for selective deposition of metal films | Electricity | 1 | Active |
| US11078224B2 | Precursors for the atomic layer deposition of transition metals and methods of use | Chemistry; Metallurgy | 0 | Active |
| US10615041B2 | Methods and materials for modifying the threshold voltage of metal oxide stacks | Electricity | 0 | Active |
| US10510546B2 | Schemes for selective deposition for patterning applications | Electricity | 0 | Active |
| US11887847B2 | Methods and precursors for selective deposition of metal films | Electricity | 0 | Active |
| US10170321B2 | Aluminum content control of TiAIN films | Electricity | 0 | Active |
| US10347495B2 | Schemes for selective deposition for patterning applications | Electricity | 0 | Active |
| US11621160B2 | Doped and undoped vanadium oxides for low-k spacer applications | Electricity | 0 | Active |
| US11836429B2 | Determination of recipes for manufacturing semiconductor devices | Electricity | 0 | Active |
| US11332488B2 | Metal precursors with modified diazabutadiene ligands for CVD and ALD and methods of use | Chemistry; Metallurgy | 0 | Active |
| US10752649B2 | Metal precursors with modified diazabutadiene ligands for CVD and ALD and methods of use | Chemistry; Metallurgy | 0 | Active |
| US11094533B2 | Doped and undoped vanadium oxides for low-k spacer applications | Electricity | 0 | Active |
| US10811250B2 | Silicon nitride films with high nitrogen content | Electricity | 0 | Active |
| US11049722B2 | Methods and materials for modifying the threshold voltage of metal oxide stacks | Electricity | 0 | Active |
| US10475642B2 | Doped and undoped vanadium oxides for low-k spacer applications | Electricity | 0 | Active |
| US10699952B2 | Deposition and treatment of films for patterning | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.