Power semiconductor device with dV/dt controllability through select trench electrode biasing, and method of manufacturing the same

US10347754B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Alexander Philippou · Munich, DE
• Christian Jaeger · Munich, DE
• Johannes Georg Laven · Taufkirchen, DE
• Max Christian Seifert · Munich, DE
• Antonio Vellei · Villach, AT

Key dates

• Filing date: Sep 14, 2017
• Grant date: Jul 9, 2019
• Expiry date: Sep 14, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/106

Abstract

A power semiconductor device is disclosed. In one example, the device comprises a semiconductor body coupled to a first load terminal and a second load terminal and comprising a drift region configured to conduct a load current between said terminals. The drift region comprises dopants of a first conductivity type. A source region is arranged in electrical contact with the first load terminal and comprises dopants of the first conductivity type. A channel region comprises dopants of a second conductivity. At least one power unit cell that includes at least one first type trench. The at least one power unit cell further includes a first mesa zone and a second mesa zone of the semiconductor body.