Inventor · Villach, AT

Antonio Vellei

23Patents
2h-index
30Co-inventors
53Inventor score

Filing activity: Sep 13, 2013 → Feb 21, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US10615272B2 Method for producing IGBT with dV/dt controllability Electricity 3 Active
US9076838B2 Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturing Electricity 3 Active
US10978418B2 Method of forming an electrical contact and method of forming a chip package with a metal contact structure and protective layer Electricity 1 Active
US10840362B2 IGBT with dV/dt controllability Electricity 1 Active
US10854739B2 Method for producing IGBT with dV/dt controllability Electricity 1 Active
US11581428B2 IGBT with dV/dt controllability Electricity 1 Active
US10224206B2 Bipolar transistor device with an emitter having two types of emitter regions Electricity 1 Active
US9553179B2 Semiconductor device and insulated gate bipolar transistor with barrier structure Electricity 1 Active
US10461056B2 Chip package and method of forming a chip package with a metal contact structure and protective layer, and method of forming an electrical contact Electricity 1 Active
US9263552B2 MOS-transistor with separated electrodes arranged in a trench Electricity 1 Active
US10910487B2 Power semiconductor device having trench electrodes biased at three different electrical potentials, and method of manufacturing the same Electricity 0 Active
US12034066B2 Power semiconductor device having a barrier region Electricity 0 Active
US9647100B2 Semiconductor device with auxiliary structure including deep level dopants Electricity 0 Active
US12033972B2 Chip package, method of forming a chip package and method of forming an electrical contact Electricity 0 Active
US10439055B2 IGBT with dV/dt controllability Electricity 0 Active
US11469317B2 RC IGBT Electricity 0 Active
US9653568B2 Method of manufacturing an insulated gate bipolar transistor with mesa sections between cell trench structures Electricity 0 Active
US11594621B2 Method of processing a power semiconductor device Electricity 0 Active
US10347754B2 Power semiconductor device with dV/dt controllability through select trench electrode biasing, and method of manufacturing the same Electricity 0 Active
US10930772B2 IGBT having a barrier region Electricity 0 Active
US9741571B2 Bipolar transistor device with an emitter having two types of emitter regions Electricity 0 Active
US10608104B2 Trench transistor device Electricity 0 Active
US9899504B2 Power semiconductor transistor having increased bipolar amplification Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.