Reconfigurable nanowire field effect transistor, a nanowire array and an integrated circuit thereof

US10347760B2 · kind B2 · utility

Assignees

• Technische Universitaet Dresden · DE
• NAMLAB GGMBH · DE

Inventors

• Tim Baldauf · Dresden, DE
• André Heinzig · Dresden, DE
• Walter M. Weber · Laguna Hills, US

Key dates

• Filing date: Jun 20, 2017
• Grant date: Jul 9, 2019
• Expiry date: Jun 20, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/85
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A reconfigurable field effect transistor (RFET) includes a nanowire, wherein the nanowire comprises two Schottky contacts, as well as two gate contacts partially enclosing the nanowire in cross section. An integrated circuit can be produced therefrom. The aim of producing CMOS circuits with enhanced functionality and a more compact design is achieved in that the nanowire is divided along the cross section thereof into two nanowire parts, wherein each nanowire part comprises a respective Schottky contact and a respective gate contact, and the two nanowire parts are connected electrically to one another via a common substrate and stand vertically on the substrate. In a nanowire-parts-array, between the nanowire parts, a respective top-gate contact and/or back-gate contact can be formed in a substrate defining a substrate plane.