Inventor · Dresden, DE

Tim Baldauf

7Patents

3h-index

7Co-inventors

42Inventor score

Filing activity: Aug 24, 2011 → Jun 20, 2017

Most-cited inventions

Patent	Title	Area	Cited by	Status
US8912606B2	Integrated circuits having protruding source and drain regions and methods for forming integrated circuits	Electricity	14	Active
US8835255B2	Method of forming a semiconductor structure including a vertical nanowire	Electricity	4	Active
US8580643B2	Threshold voltage adjustment in a Fin transistor by corner implantation	Electricity	3	Active
US10347760B2	Reconfigurable nanowire field effect transistor, a nanowire array and an integrated circuit thereof	Electricity	2	Active
US9484407B2	Methods of forming a nanowire transistor device	Electricity	0	Active
US8941187B2	Strain engineering in three-dimensional transistors based on strained isolation material	Electricity	0	Active
US8916928B2	Threshold voltage adjustment in a fin transistor by corner implantation	Electricity	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.