System and process for in situ byproduct removal and platen cooling during CMP
US10350728B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2015 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Oct 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/27845
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Polishing pad cleaning systems and related methods are disclosed. A rotatable platen comprising a polishing pad in combination with a fluid, such as a polishing fluid, contacts a substrate to planarize material at the surface thereof and resultantly creates debris. A cleaning system introduces a spray system to remove debris from the polishing pad to prevent substrate damage and improve efficiency, a waste removal system for removing used spray, used polishing fluid, and debris from the polishing pad, and a polishing fluid delivery system for providing fresh polishing fluid to the polishing pad, such that the substrate only receives fresh polishing fluid upon each complete rotation of the platen. In this manner, within die performance is enhanced, the range of certain CMP processes is improved, scratches and contamination are avoided for each polished substrate and for later-polished substrates, and platen temperatures are reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.